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 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB812
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) *High Power Dissipation *Complement to Type 2SD1032
APPLICATIONS *Designed for AF power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
ww w
scs .i
UNIT -60 V -60 V -5 V -4 A -8 A 60 W
.cn mi e
IC
Collector Current-Continuous
ICM
Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature
PC
TJ
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(on) ICEO ICES hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base -Emitter On Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= -30mA; IB= 0 IC= -4A; IB= -0.4A
B
2SB812
MIN -60
TYP.
MAX
UNIT V
-1.5 -2.0 -700 -400
V V A A
IC= -3A; VCE= -4V VCE= -30V; IB= 0
B
VCE= -60V; VBE= 0 IC= -1A; VCE= -4V
Switching times ton toff Turn-on Time
Turn-Off Time
hFE-1 Classifications R 40-90 Q 70-150
w
ww
sem isc .
IC= -3A; VCE= -4V IC= -4A, IB1= -IB2= -0.4A
.cn i
15
40
250
0.2 1.4
s s
P 120-250
isc Websitewww.iscsemi.cn
2


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